What They Build
AGNIT develops gallium nitride semiconductor technology across wafer fabrication, devices, RF subsystems, and power-electronics applications for radar, telecom, and high-efficiency power systems.
Why They Matter
GaN is a strategic compound-semiconductor layer for radar, 5G infrastructure, EV power electronics, and high-efficiency systems. AGNIT matters because it grew out of deep IISc research and is trying to build more of the value chain in India than a typical fabless chip company. The hard part is moving from pilot-line proof to repeatable production without losing performance.
Founders
Dr. Hareesh Chandrasekar, Dr. Muralidharan Rangarajan
Recent Milestones
- IISc FSID-incubated with MeitY, iDEX, and Karnataka ELEVATE support
- $3.5M seed round closed in September 2024, co-led by 3one4 Capital and Zephyr Peacock India
- $2.6M seed extension closed in March 2026, led by Shastra VC, with a stated plan to scale GaN component production to 100,000 units over two years
- GaN testing and qualification laboratory opened at IISc Bengaluru in June 2026 for in-house validation and reliability testing
- Pilots reported across radio handsets, drone communications, drone jammers, and radar platforms; telecom RF and power-device validation planned
This profile reflects only publicly disclosed information.